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The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films
Published online by Cambridge University Press: 20 June 2011
Abstract
The p-type conduction in transparent Ga-doped SnO2 thin films was realized and its two origins were discerned through comparison experiments associated with growth conditions, Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy analysis. All the experiment results suggest that the adsorbed oxygen both in the grain boundaries and at the surfaces is another origin of the net hole conduction in the polycrystalline thin films. This mechanism provides a fairy well explanation for the growth temperature dependence of the p-type conductivities of the films. It also offers a useful guide to better the properties of p-type conducting oxide thin films.
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- Research Article
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- Copyright © Materials Research Society 2011
Footnotes
Present address: Shanghai Synchrotron Radiation Facility, Shanghai 201204, China