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Polarity of Hexagonal GaN Grown on GaAs (111)A and (111)B Surfaces by HVPE and Movpe

Published online by Cambridge University Press:  17 March 2011

O. Takahashi ,
M. Namerikawa ,
H. Tanaka ,
R. Souda ,
T. Suemasu  and
F. Hasegawa
O. Takahashi
Affiliation:
University of Tsukuba, Institute of Applied Physics, Tsukuba., Japan
M. Namerikawa
Affiliation:
University of Tsukuba, Institute of Applied Physics, Tsukuba., Japan
H. Tanaka
Affiliation:
NTT Cyber Space Laboratories, Musashino-shi, Japan
R. Souda
Affiliation:
National Institute for Research in Inorganic Materials, Tsukuba,., Japan
T. Suemasu
Affiliation:
University of Tsukuba, Institute of Applied Physics, Tsukuba., Japan
F. Hasegawa
Affiliation:
University of Tsukuba, Institute of Applied Physics, Tsukuba., Japan
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Abstract

Summary:

Dependence of hexagonal GaN polarity on the polarity of GaAs (111) substrates was investigated by CAICISS for HVPE and MOVPE. Although polarity of MOVPE GaN followed the polarity of GaAs substrate; Ga polar for (111)A and N polar for (111)B, both layers of HVPE GaN grown on GaAs (111)A & B surfaces were Ga polarity. Crystal quality was better for Ga polarity layers than for N polarity layers for MOVPE. However, Ga polar GaN grown on GaAs (111)B by HVPE had better crystal quality than that on the (111)A. These results can be understood by difference of the buffer layers and difference of growth kinetics between HVPE and MOVPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.8
Copyright
Copyright © Materials Research Society 2001

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References

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