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Fullerene Based n-type Organic Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Joshua Haddock ,
Benoit Domercq  and
Bernard Kippelen
Joshua Haddock
Affiliation:
Center for Organic Photonics and Electronics School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr NW, Atlanta, GA 30332, USA
Benoit Domercq
Affiliation:
Center for Organic Photonics and Electronics School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr NW, Atlanta, GA 30332, USA
Bernard Kippelen
Affiliation:
Center for Organic Photonics and Electronics School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr NW, Atlanta, GA 30332, USA
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Abstract

Significant progress has been made in the area of p-type organic field effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C60 and C70. Here, we report mobilities for C60 ranging from 0.02 cm2/Vs up to 0.65 cm2/Vs (depending on channel length), and mobilities from 0.003 cm2/Vs up to 0.066 cm2/Vs for C70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I3.11
Copyright
Copyright © Materials Research Society 2005

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