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Fundamentals of Energy Transfer During Picosecond Irradiation of Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
The fundamentals of energy transfer in semiconductors during and following pulsed laser excitation are reviewed within the frame of results obtained in picosecond laser experiments. This paper discusses the theoretical processes as well as the experimental evidence, which sets limits of electron and lattice temperature of irradiated silicon. Simple thermal melting is the most probable explanation for the laser induced phase transitions observed.
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- Copyright © Materials Research Society 1982
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