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Laser Light Scattering in-situ Studies on the Growth of Chalcopyrite Thin Films

Published online by Cambridge University Press:  21 March 2011

R. Scheer
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Ch. Pietzker
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
D. Bräunig
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

The method of diffuse laser light scattering (LLS) has been tested for process monitoring of simultaneous and sequential chalcopyrite film formation. Characteristic LLS features are observed which can be assigned to morphological and optoelectronic film modifications. The surface roughness development as a function of time of CuInS2 and CuInSe2 epilayers grown on Si(111) substrates is monitored. It is found that the critical thickness of a smooth surface without islands depends on the film composition (Cu/(Cu+In) ratio). LLS transients for sequential film formation depict a series of characteristic features which are connected with, e.g., precursor transformation, surfacial sulfurization, and secondary phase transformation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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