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P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition
Published online by Cambridge University Press: 21 February 2011
Abstract
In this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.
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- Copyright © Materials Research Society 1995