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Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation
Published online by Cambridge University Press: 15 February 2011
Abstract
In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.
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- Copyright © Materials Research Society 1997
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