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High Rate Deposition of Microcrystalline Silicon Solar Cells Using 13.56 MHz PECVD – Prerequisites and Limiting Factors

Published online by Cambridge University Press:  01 February 2011

Tobias Roschek ,
Tobias Repmann ,
Oliver Kluth ,
Joachim Müller ,
Bernd Rech  and
Heribert Wagner
Tobias Roschek
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Tobias Repmann
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Oliver Kluth
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Joachim Müller
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Bernd Rech
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Heribert Wagner
Affiliation:
Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Microcrystalline silicon (μìc-Si:H) solar cells were prepared in a wide range of deposition parameters using high pressure 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD). Focus was on the influence of deposition pressure, electrode distance and the application of a pulsed plasma on high rate deposition of solar cells. At electrode distances between 5 and 20 mm solar cells with efficiencies >8 % were prepared. A medium electrode distance of 10 mm yielded best device performance. Pulsed plasma deposition leads to good results at medium deposition rates of ∼5 Å/s, for higher rates a strong decrease of efficiency was observed. The highest efficiencies in a small area reactor were 8.9 % for CW and 8.4 % for pulsed plasma. We also succeeded in preparing μc-Si:H and a-Si:H/μc-Si:H solar cells in a 30x30 cm2 reactor with efficiencies of 9 % and 12.5 %, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A26.5
Copyright
Copyright © Materials Research Society 2002

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