Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-09-23T09:59:45.696Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Low Temperature Methods for the Production of Silicon Dioxide Thin Films.

Published online by Cambridge University Press:  22 February 2011

Stephen D. Baker ,
W. I. Milne  and
S. Taylor
Stephen D. Baker
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, UK
W. I. Milne
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, UK
S. Taylor
Affiliation:
Department of Electrical Engineering and Electronics, Liverpool University, PO Box 147, L69 3BX, UK.
Get access

Abstract

In this paper we present a comparison of the physical and electrical properties of high quality insulating thin films of silicon dioxide produced at low temperatures by three methods; standard plasma enhanced CVD of silane/nitrous oxide, photo enhanced CVD of silane/nitrous oxide using a novel internal nitrogen discharge lamp, and oxygen plasma anodisation.

The electrical and interface properties of the films, obtained from current-voltage and capacitance-voltage measurements are compared. The physical properties and composition of the films have been investigated by standard methods such as ellipsometry and p-etch rate, and spectroscopic techniques such as Auger, XPS, LIMA and Infrared absorption. The results of these investigations are reported.

The effects of low temperature annealing on the film properties have been examined and the suitability of each of the fabrication techniques to a variety of applications is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 109
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Luo, F-C., Pultorak, D. & Freeman, E., IEEE Trans. El. Devices, FD–30, 202 (1983).Google Scholar
[2] Eagle, D.J., PhD Thesis, Cambridge University, 1986.Google Scholar
[3] Pliskin, W.A., J. Vac. Sci. Tech. 14, 1064 (1977).CrossRefGoogle Scholar
[4] Thanh, L. Do, Exner, V. & Balk, P., in Proceedings of INFOS ′87, Leuven, Belgium, April 1987.Google Scholar
[5] Hu, S.M., J. Vac. Sci. Tech., 14, 1 (1977).CrossRefGoogle Scholar
[6] Taylor, S., Barlow, K.J., Eccleston, W. & Kiermasz, A., IEE Electronics Lett. 23, 7 (1987).Google Scholar
[7] Adams, A.C., Alexander, F.B., Capio, C.D. & Smith, T.E., J. Electrochem. Soc., 128, 1545 (1981).CrossRefGoogle Scholar
[8] Tarui, Y., Hidaka, J. & Aota, K., Jap. J. Appl. Phys., 23, L827 (1981).CrossRefGoogle Scholar
[9] Robertson, P.A. & Milne, W.I., in Proceedings of the MRS Fall Meeting, Boston, December 1986.Google Scholar
[10] Pavelescu, C., Cobianu, C., Condruic, L. & Segal, E., Thin Solid Films, 114, 291 (1984).CrossRefGoogle Scholar
[11] Baker, S.D., Clay, K.J., Clough, F.J., Milne, W.I. & Taylor, S., in Proceedings of E-MRS Meeting, Strasbourg, April 1987.Google Scholar
[12] Batey, J. & Tierney, E., J. Appl. Phys., 60, 3136 (1986).CrossRefGoogle Scholar