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Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine
Published online by Cambridge University Press: 28 February 2011
Abstract
This paper discusses recent improvements achieved in the growth of epitaxial layers of GaAs and AlGaAs using the liquid arsine substitute tertiarybutylarsine (TBA) and metal alkyls. The high purity TBA now available yields undoped GaAs with residual donor/acceptor concentrations in the low 1014 cm−3 range. Under optimized growth conditiorp the layers are either n-type and have 77*K mobilities up to 85,000 cm2 //Vs or they are compensated or p-type. For aluminum gallium arsenide, layers grown with TBA have properties similar to arsine-grown material as demonstrated by low temperature photoluminescence (PL). The PL efficiencies and line widths of the TBA-grown AlGaAs samples are comparable to those prepared with arsine.
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- Copyright © Materials Research Society 1989
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