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Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

X. A. Cao ,
J. M. Teetsov ,
S. F. LeBoeuf ,
S. D. Arthur  and
J. Kretchmer
X. A. Cao
Affiliation:
General Electric Global Research Center, Niskayuna, NY 12309
J. M. Teetsov
Affiliation:
General Electric Global Research Center, Niskayuna, NY 12309
S. F. LeBoeuf
Affiliation:
General Electric Global Research Center, Niskayuna, NY 12309
S. D. Arthur
Affiliation:
General Electric Global Research Center, Niskayuna, NY 12309
J. Kretchmer
Affiliation:
General Electric Global Research Center, Niskayuna, NY 12309
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Abstract

InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission at ∼405 nm were grown on bulk GaN and sapphire substrates using MOCVD. Tunneling current was found to be dominant in the LED on sapphire over a wide range of applied bias, but was substantially suppressed in the homoepitaxial LED. Nanoscale electrical characterization using conductive atomic force microscopy (C-AFM) revealed highly localized leakage current at V-defects in the LED structure on sapphire, indicating that the associated threading dislocations were electrically active and behaved as leakage current pathways connected across the p-n junction. Compared to the lateral LED on sapphire, the vertically-structured LED on GaN had a reduced series resistance of 7 Ω and greatly improved power conversion efficiencies. The homoepitaxial LED was subjected to stress test at 400 mA for 24 h and showed minimal optical degradation, whereas the same stress resulted in the destruction of the LED on sapphire due to increased current crowding and self-heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E10.7
Copyright
Copyright © Materials Research Society 2005

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References

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