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The Growth of Type-II Infrared Laser Structures
Published online by Cambridge University Press: 10 February 2011
Abstract
The MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.
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- Copyright © Materials Research Society 1998