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Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy
Published online by Cambridge University Press: 10 February 2011
Abstract
Thermal stability has been evaluated for ALE-grown Si/Ge interfaces by co-axial impact collision ion scattering spectroscopy. The IML-thick Si layer on Ge was stable only at less than 360°C. The 2ML-thick Si layer on Ge, however, was stable up to 550°C, and Si layers could be also ALE-grown successively on the 2ML-thick Si layer on Ge, while keeping the interface abrupt, since the Si-ALE growth temperature was about 530°C.
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- Copyright © Materials Research Society 2000