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Diameter Dependent Current-Voltage Characteristics of InSb Nanowires
Published online by Cambridge University Press: 22 August 2011
Abstract
Single crystalline Indium Antimonide (InSb) nanowires were synthesized by chemical vapor deposition (CVD) technique, using gold (Au) nanoparticles as catalyst, via a vapor liquid solid mechanism. Structural properties of the as-grown InSb nanowires were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Nanowire field effect transistors (NWFETs) were fabricated in back-gate configuration, on Si/SO2 substrates, using SiO2 as gate insulator. The diameter of InSb nanowires used in the fabricated devices varied from 15-80 nm. Current-voltage measurements were conducted to determine the dependence of NWFETs parameters on the InSb nanowire diameter. Carrier mobility was shown to decrease with decrease of nanowire diameter. Temperature dependen current-voltage measurements were conducted to determine the effect of operating temperature on the InSb NWFET device performance.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee06-03
- Copyright
- Copyright © Materials Research Society 2011