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Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

Published online by Cambridge University Press:  21 March 2011

Atsushi Motogaito ,
Keiichi Ohta ,
Kazumasa Hiramatsu ,
Youichiro Ohuchi ,
Kazuyuki Tadatomo ,
Yutaka Hamamura  and
Kazutoshi Fukui
Atsushi Motogaito
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Keiichi Ohta
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Youichiro Ohuchi
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4-3 Ikejiri, Itami, Hyogo 664-0027, Japan
Kazuyuki Tadatomo
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4-3 Ikejiri, Itami, Hyogo 664-0027, Japan
Yutaka Hamamura
Affiliation:
Nikon Corporation, Precision Equipment Company, 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan
Kazutoshi Fukui
Affiliation:
Research Center for Development of Far-Infrared Region, Fukui University, 3-9-1 Bunkyo, Fukui, Fukui 910-8507, Japan
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Abstract

Characterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50<l >360 nm). In particular, the latter realizes high responsivity (0.01 A/W for VUV light) and no photoemission of Au and GaN. The penetration depth for VUV light was estimated to 0.01 m. So the VUV light was absorbed in near the surface of i-GaN layer or the interface of Au and i-GaN layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.44.1
Copyright
Copyright © Materials Research Society 2002

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