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Performance of CuGaSe2 Solar Cells Grown By Co-Evaporation Process

Published online by Cambridge University Press:  01 February 2011

Jae Ho Yun
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
R.B.V. Chalapathy
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
Seok Ki Kim
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
Jeong Chul Lee
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
Jinsoo Song
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
Kyung Hoon Yoon
Affiliation:
Solar Cells Research Center, Korea Institute of Energy Research, 71-2, Jang-dong, Yuseong-gu, Daejeon, 305-343, South Korea.
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Abstract

CuGaSe2 absorber layers were prepared by evaporating elemental Cu, Ga and Se in three stage on Molybdenum coated soda lime glass. The composition of the resultant film was studied by monitoring the substrate temperature, which decreased when a Cu-Se secondary phase was formed. As the Ga supplement increased during the third stage the void that formed in the beginning of the third stage was removed, while a small grain Ga-rich layer was formed on the surface, resulting in a Cu deficient surface. Therefore, the Voc was improved because of the enhanced surface morphology and the Jsc was reduced, due to the Ga rich layer on of the surface. Under optimal conditions, we achieved a cell performance of Voc = 780 mV, Jsc = 12.9 mA/cm2, ff = 62.5 and ν = 7.3 %.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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