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Intrinsic Surface Defects on 4H SiC Substrates
Published online by Cambridge University Press: 01 February 2011
Abstract
We have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.
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- Copyright © Materials Research Society 2010
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