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Cu gettering in Si cavities observed by Positron Annihilation Doppler Broadening

Published online by Cambridge University Press:  17 March 2011

H. Schut ,
A. van Veen  and
S.W.H. Eijt
H. Schut
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
S.W.H. Eijt
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
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Abstract

In this study we present the results of Positron Beam Annihilation (PBA) experiments on the gettering of copper in Cz-Si implanted with 33 keV He+ ions with doses ranging from 0.5 to 3× 1016cm−2 followed by an anneal treatment at 1100 K under N2 ambient. For the higher doses this yields a sub-surface layer containing nanometer sized cavities. Copper is introduced into these cavities by diffusing from the backside of the wafer at 1000 K, again under N2 ambient. Mapping of the S and W Doppler broadening parameters, with the implantation dose as running parameter, shows the formation of cavities. After the Cu in-diffusion the change in the values of the characteristic S-W cluster points clearly demonstrates the arrival of Cu at the internal surface of the cavities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.5
Copyright
Copyright © Materials Research Society 2001

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