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Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond
Published online by Cambridge University Press: 01 February 2011
Abstract
We report the results of experiments that attempt to deposit n-type CVD diamond in a standard hot filament reactor using 1%CH4/H2 gas mixtures, using (i) AsH3 as a gas phase source of arsenic, and (ii) evaporated Sb or Sb(Ph)3 as a source of antimony. SIMS measurements revealed that under these conditions, neither Sb nor As is incorporated into the diamond film, and the Raman spectra, electrical conductivity and crystallite morphology remain unchanged from that of undoped diamond. These experiments confirm the predicted low incorporation efficiency for As and Sb, and we conclude that doping CVD diamond with these elements cannot readily be achieved in this manner.
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- Copyright © Materials Research Society 2008
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