Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-25T08:16:30.713Z Has data issue: false hasContentIssue false

Secondary Ion Mass Spectroscopy Study of Failure Mechanism in Organic Light Emitting Devices

Published online by Cambridge University Press:  17 March 2011

Lin Ke
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
Keran Zhang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
Ramadas Senthil Kumar
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
Soo Jin Chua
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
Nikolai Yakovlev
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
Get access

Abstract

Secondary ion mass spectroscopy is used to examine the dark, non-emissive defects on the organic light-emitting device. Boundary movements are originated from electrode imperfection. Due to flexibility and movability of polymer layer, distribution variations and a more severe Indium and Calcium overlapping are detected in dark spot defect area. Boundary movements are not in good agreement between different layers. Interfaces became undulate. The closeness and proximity between the In sharp spikes and cathode metal protrusion leads to the initial point of dark spot. We demonstrate that the presence of cathode imperfection and interface roughness of different layers correlated to the device dark spot formation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tang, C. W. and Vanslyke, S. A., Appl. Phys. Lett. 5, 913 (1987)Google Scholar
2 Burrows, P. E., Bulovic, V., Forrest, S. R., Sapochak, L. S., McCarty, D. M. and Thompson, M. E., Appl. Phys. Lett. 65, 2922 (1994).Google Scholar
3 Sato, Y. and Kanai, H., Mol. Cryst. Liq. Cryst. 253, 143 (1994).Google Scholar
4 Aziz, H., Popovic, Z., Xie, S., Hor, A. M., Hu, N. X., Tripp, C. and Xu, G., Appl. Phys. Lett. 72, 756 (1998).Google Scholar
5 Do, L. M., Oyamada, M., Koike, A., Han, E. M., Yamamoto, N. and Fujihira, M., Thin Solid Films 273, 209 (1996).Google Scholar
6 Savvate'ev, V. N., Yakimov, A. V. and Davidov, D., Pogred, R. M., Neumann, R. and Avny, Y., Appl. Phys. Lett. 71, 3344 (1997).Google Scholar
7 Cumpston, B. H. and Jensen, K. F.. Appl. Phys. Lett. 69, 3941 (1996)Google Scholar
8 Rasmusson, J. R., Broms, P., Birgeson, J., Erlandsson, R., and Salanek, W. R., Synth. Met. 79,754 (1996)Google Scholar
9 Savvate'ev, Vadim N., Yakimov, Aharon V., and Davidov, Dan, Appl. Phys. Lett. 71, 3344 (1997)Google Scholar