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Formation of a Thermally Stable NiSi FUSI Gate Electrode by a Novel Integration Process

Published online by Cambridge University Press:  01 February 2011

Shiang Yu Tan ,
Hsien-Chia Chiu  and
Chun-Yen Hu
Shiang Yu Tan
Affiliation:
txy2@faculty.pccu.edu.tw, Chinese Culture University, Department of Electrical Engineering, Department of Electrical Engineering, Chinese Culture University, Taipei 111, Taiwan, ROC, Taipei, 111, Taiwan, +886 972172847, +886 2 28625230
Hsien-Chia Chiu
Affiliation:
Chinese Culture University, Graduate Institute of Materials Science and Nanotechnology, 55, Hwa-Kang Road, Yang-Ming-Shan, Taipei, 11114, Taiwan
Chun-Yen Hu
Affiliation:
Chinese Culture University, Graduate Institute of Materials Science and Nanotechnology, 55, Hwa-Kang Road, Yang-Ming-Shan, Taipei, 11114, Taiwan
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Abstract

Nickel silicide is promising to be the choice material as contact to the source, drain, and gate for sub-65 nm and 45 nm CMOS devices. However, the thermal stability of NiSi is worse as the high resistivity phase of NiSi2 nucleates at about 750 °C and film agglomeration occurs even at a temperature as low as 600 °C. The process integration issues and formation thermally stable NiSi are needed to be understood and addressed. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a novel integration process by using a two-step anneal process associating with properly tuned thickness of the initial Ni film and implant BF2 atoms during the poly-gate formation. As results, push the transformation of NiSi2 to a higher temperatures at about 900 °C. Several measurement techniques such as XRD, TEM, SEM and Resistivity are carried out to demonstrate its physical and electrical properties.

Keywords

electronic materialSimicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L06-08
Copyright
Copyright © Materials Research Society 2007

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