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Temperature Dependent Defect Density Calculated from Activated Conductivity of a-Si:H
Published online by Cambridge University Press: 21 February 2011
Abstract
Thermally activated conductivity of a—Si:H at a slow cooling rate of 0.3 K/min is connected with temperature dependent changes of the mobility gap states. By means of the Fermi—level shift calculated from these data and a density of states model it is possible to determine this dependence. The results mainly reveal a decrease of the defect state density by about a tenth between 375 K and 400 K.
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- Copyright © Materials Research Society 1991
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