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Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

M. A. Tischler  and
T. F. Kuech
M. A. Tischler
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598.
T. F. Kuech
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598.
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Abstract

The control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As p+/n heterojunctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 91
Copyright
Copyright © Materials Research Society 1989

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References

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