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CVD of Carbide Multi-Phased Coatings

Published online by Cambridge University Press:  21 February 2011

K.E. Versprille
Affiliation:
Materials Science Program, University of New Hampshire, Durham, NH 03824
Hua Xia Ji
Affiliation:
Materials Science Program, University of New Hampshire, Durham, NH 03824
C.C. Amato-Wierda
Affiliation:
Materials Science Program, University of New Hampshire, Durham, NH 03824
P.J. Ramsey
Affiliation:
Mathematics Department, University of New Hampshire, Durham, NH 03824
D.A. Wierda
Affiliation:
Chemistry Department, Saint Anselm College, Manchester, NH 03102
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Abstract

TiC and Ti-W-C films have been produced by chemical vapor deposition (CVD). A fractional factorial design was used to study the effects of deposition temperature, C:Ti input, H:Ti input, reactor pressure, and total mass flow on TiC film composition. Statistical models were developed for both titanium at.% and C:Ti in the film. It was found that the most significant affect on titanium at.% was the interaction of temperature, pressure and total mass flow. The most important affect on the C:Ti in the deposited film was the interaction C:Ti input, H:Ti, and total mass flow. Ti-W-C films have been deposited at 1050°C at various (TiCl4+W(CO)6)/CH4 inlet ratios ranging from 0.53 to 1.01. The characterization of the films revealed that the changes in deposition rate, crystallinity, film orientation, and morphology of various Ti-W-C compositions were affected by (TiCl4+W(CO)6)/CH4 inlet ratios.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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