Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T11:48:05.582Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of totem-pole drivers in SiGe for RF and wideband applications

Published online by Cambridge University Press:  05 January 2012

Michael Wickert ,
Robert Wolf  and
Frank Ellinger
Michael Wickert*
Affiliation:
Dresden University of Technology, Chair for Circuit Design and Network Theory, 01062 Dresden, Germany
Robert Wolf
Affiliation:
Dresden University of Technology, Chair for Circuit Design and Network Theory, 01062 Dresden, Germany
Frank Ellinger
Affiliation:
Dresden University of Technology, Chair for Circuit Design and Network Theory, 01062 Dresden, Germany
*
Corresponding author: M. Wickert Email: michael.wickert@tu-dresden.de
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents an analysis of totem-pole (TP) stages for driver applications and summarizes the major design constraints for an optimization with respect to P1dB, OIP3, and bandwidth. It is shown, that for matched drivers, in contrast to the widely applied common collector (CC) stage, class-AB TP stages offer higher output power and much higher power-added efficiencies (PAE) at comparable bandwidth. A combiner chip in 0.25 μm SiGe Bipolar CMOS (BiCMOS) verifying this concept in hardware as output driver is demonstrated proofing the increased achievable output power, which was measured greater than +0.1 dBm. This is approximately 11 dB higher than for a conventional CC driver. Furthermore, a concept is proposed, where the TP stage can act as a broadband matched driver for differential or balun operation ranging down to DC. As verification a broadband driver design using a class-AB TP stage is presented, which has a 3 dB bandwidth of 7.9 GHz and delivers up to +4.3 dBm into a 50 Ω load, which is 17 dB higher than its CC counterpart. At this output power it consumes a DC power of 12.3 mW and yields a PAE of 16.1%.

Keywords

driver circuitbroadband amplifierBiCMOSRFICRF combiner
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 2: Special issue on Surveillance Systems for Air Navigation Services , April 2012 , pp. 247 - 255
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Paulraj, A.; Nabar, R.; Gore, D.: Introduction to Space–Time Wireless Communications, Cambridge University Press, Cambridge, 2003.Google Scholar
[2]Mayer, U.; Wickert, M.; Eickhoff, R.; Ellinger, F.: Multiband mixed-signal vector modulator IC, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 2011.Google Scholar
[3]Yeh, C.: Analysis of a single-ended push–pull audio amplifier. Proc. Inst. Radio Eng., 41 (6) (1953), 743–747.Google Scholar
[4]Koh, K.-J.; Rebeiz, G.M.: A Q-band four-element phased-array front-end receiver with integrated Wilkinson power combiners in 0.18-µm SiGe BiCMOS technology. IEEE Trans. Microw. Theory Tech., 56 (9) (2008), 2046–2053.Google Scholar
[5]Tiiliharju, E.; Pellikka, H.; Halonen, K.: A current re-use mixer and a push–pull buffer for base station applications. IEEE Microw. Compon. Lett., 16 (9) (2006), 514–516.CrossRefGoogle Scholar
[6]Issakov, V.; Knapp, H.; Bakalski, W.; Wojnowski, M.; Thiede, A.; Simbürger, W.: Compact on-chip 90° and 180° splitters/combiners in silicon technology for 24 GHz applications, in Proc. of the 40th European Microwave Conf., Paris, France, September 2010.Google Scholar
[7]Ashburn, P.: SiGe Heterojunction Bipolar Transistors, John Wiley & Sons Ltd., Chichester, UK, 2003.CrossRefGoogle Scholar
[8]Nenadovic, N.; Nanver, L.K.; Slotboom, J.W.: Electrothermal limitations on the current density of high-frequency bipolar transistors. IEEE Trans. Electron Devices, 51 (12) (2004), 2175–2180.CrossRefGoogle Scholar