Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-14T10:23:39.485Z Has data issue: false hasContentIssue false
  • English
  • Français

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

Published online by Cambridge University Press:  21 March 2011

P. V. Necliudov ,
D. J. Gundlach ,
T. N. Jackson ,
S. L. Rumyantsev  and
M. S. Shur
P. V. Necliudov
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Electrical, Computer and System Engineering, Troy, NY
D. J. Gundlach
Affiliation:
Pennsylvania State University, Dept. of Electrical Engineering, University Park, PA
T. N. Jackson
Affiliation:
Pennsylvania State University, Dept. of Electrical Engineering, University Park, PA
S. L. Rumyantsev
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Electrical, Computer and System Engineering, Troy, NY A.F. Ioffe Institute of Russian Academy of Sciences, Solid State Electronics Division, St. Petersburg, Russia
M. S. Shur
Affiliation:
Rensselaer Polytechnic Institute, Dept. of Electrical, Computer and System Engineering, Troy, NY
Get access

Abstract

We studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.

Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.

To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 598: Symposium BB – Electrical, Optical, & Magenetic Properties...V , 1999 , BB11.54
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gundlach, D. J., Kuo, C. C., Nelson, S. F., Jackson, T. N., 57th Device Research Conference Digest, p. 164–165, (June 1999)Google Scholar
2. Lin, A. Y.-Y., Dodabalapur, R., Sarpeshkar, Z., Bao, W., Li, K., Baldwin, V., Raju, R., and Katz, H. E., Applied Physics Letters, vol. 74, p. 2714–2716, (1999)Google Scholar
3. Bonse, M., Thomasson, D. B., Klauk, H., Gundlach, D. J., Jackson, T. N., 1998 International Electron Devices Meeting Technical Digest, p. 1080, 249–52 (1998)Google Scholar
4. Vandamme, L. K. J., Li, X., Rigaud, D., IEEE Transactions on Electron Devices, V. 41, No. 11, pp. 1936–44., (1994)Google Scholar
5. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., and Jackson, T. N., IEEE Transaction on Electron Devices, vol. 44, No. 8, p. 320–325 (1997)Google Scholar
6. Guk, E. G., Levinshtein, M. E., Markhin, V. A., Myasnikova, L. P. and Rumyantsev, S. L., Phys. Solid. State, v.39, N4, p.690, (1997)Google Scholar
7. Chang, J., Abbidy, A. A., Vishnanathan, C. R., IEEE Transactions on Electron Devices, v. 41, No. 11, pp. 1965–71, (1994)Google Scholar
8. Hooge, F. N., IEEE Transactions on Electron Devices, vol 41, No 11, (1994)Google Scholar
9. Necliudov, P. V., Shur, M. S., Gundlach, D. J., Jackson, T. N., ISDRS - 99 Proceedings, p. 373–376; (1999).Google Scholar