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The Adsorption-Desorption of Cations at the Silica-Water its Implication in Wafer-Cleaning Efficacy

Published online by Cambridge University Press:  10 February 2011

W. Lee ,
K. J. Torek ,
D. A. Palsulich  and
L. Weston
W. Lee
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, wlee@micron.com
K. J. Torek
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, wlee@micron.com
D. A. Palsulich
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, wlee@micron.com
L. Weston
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, wlee@micron.com
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Abstract

The adsorption-desorption of various cations at the silica-water interface is discussed in terms of electrical double layer and surface complexation models. Some experimentally determined surface equilibria constants from the literature are tabulated for Fe, Cu, and Mg. The adsorption phenomena of those cations onto silica gel is described using the stability calculation (STABCAL) computer program based on the suggested models.

A chemical oxide (silica) is grown on the silicon surface during the SC1 and/or SC2 processes. Adsorption of Fe, Cu, and Mg onto this chemical oxide is studied as a function of pH and compared to the modeling results. In general, there is a qualitative correlation between the experimental and modeling data, which can be used as a basis to develop a quantitative model for cation adsorption-desorption on the wafer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 57
Copyright
Copyright © Materials Research Society 1997

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References

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