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Limited Reaction Processing of Silicon: Oxidation and Epitaxy
Published online by Cambridge University Press: 26 February 2011
Abstract
Limited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in – situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.
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- Copyright © Materials Research Society 1986
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