13 results
Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J1.4
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- 2004
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The Effect of Annealing on High-resistivity and Semi-insulating 4H-SiC
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- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K5.16
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- 2002
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Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
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- 11 February 2011, K3.3
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- 2002
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The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 237
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- 1999
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Characterization of Vanadium-Doped 4H-SiC Using Optical Admittance Spectroscopy
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 253
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- 1999
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The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 187
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- January 1998
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Characterization of CdGeAs2 Using Capacitance Methods
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- MRS Online Proceedings Library Archive / Volume 484 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 581
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- 1997
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Thermal And Optical Admittance Spectroscopy Studies Of Defects In 15r-Sic
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 705
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- 1996
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Impurity Conduction in n-Type 4H-SIC
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
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- 15 February 2011, 637
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- 1996
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Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 507
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- 1996
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Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 539
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- 1995
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Electrical and Optical Properties of Defects in N-Type 4h-Sic
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- Journal:
- MRS Online Proceedings Library Archive / Volume 410 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 57
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- 1995
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Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy
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- MRS Online Proceedings Library Archive / Volume 339 / 1994
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- 21 February 2011, 711
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- 1994
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