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Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
For centuries, the sea and those who sail upon it have inspired the imaginations of British musicians. Generations of British artists have viewed the ocean as a metaphor for the mutable human condition - by turns calm and reflective, tempestuous and destructive - and have been influenced as much by its physical presence as by its musical potential. But just as geographical perspectives and attitudes on seascapes have evolved over time, so too have cultural assumptions about their meaning and significance. Changes in how Britons have used the sea to travel, communicate, work, play, and go to war have all irresistibly shaped the way that maritime imagery has been conceived, represented, and disseminated in British music. By exploring the sea's significance within the complex world of British music, this book reveals a network of largely unexamined cultural tropes unique to this island nation. The essays are organised around three main themes: the Sea as Landscape, the Sea as Profession, and the Sea as Metaphor, covering an array of topics drawn from the seventeenth century to the twenty-first. Featuring studies of pieces by the likes of Purcell, Arne, Sullivan, Vaughan Williams, and Davies, as well as examinations of cultural touchstones such as the BBC, the Scottish fishing industry, and the Aldeburgh Festival, The Sea in the British Musical Imagination will be of interest to musicologists as well as scholars in history, British studies, cultural studies, and English literature.
ERIC SAYLOR is Associate Professor of Musicology at Drake University.
CHRISTOPHER M. SCHEER is Assistant Professor of Musicology at Utah State University.
CONTRIBUTORS: Byron Adams, Jenny Doctor, Amanda Eubanks Winkler, James Brooks Kuykendall, Charles Edward McGuire, Alyson McLamore, Louis Niebur, Jennifer Oates, Eric Saylor, Christopher M. Scheer, Aidan J. Thomson, Justin Vickers, Frances Wilkins
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
Edited by
Eric Saylor, Associate Professor, musicology (Drake University),Christopher M. Scheer, Associate Professor, musicology (Utah State University)
A new process route for lateral growth of nearly defect free GaN structures via Pendeo-epitaxy is discussed. Lateral growth of GaN films suspended from {110} side walls of [0001] oriented GaN columns into and over adjacent etched wells has been achieved via MOVPE technique without the use of, or contact with, a supporting mask or substrate. Pendeo-epitaxy is proposed as the descriptive term for this growth technique. Selective growth was achieved using process parameters that promote lateral growth of the {110} planes of GaN and disallow nucleation of this phase on the exposed SiC substrate. Thus, the selectivity is provided by tailoring the shape of the underlying GaN layer itself consisting of a sequence of alternating trenches and columns, instead of selective growth through openings in SiO2 or SiNx mask, as in the conventional lateral epitaxial overgrowth (LEO).
Two modes of initiation of the pendeo-epitaxial GaN growth via MOVPE were observed: Mode A - promoting the lateral growth of the {110} side facets into the wells faster than the vertical growth of the (0001) top facets; and Mode B - enabling the top (0001) faces to grow initially faster followed by the pendeo-epitaxial growth over the wells from the newly formed {110} side facets. Four-to-five order decrease in the dislocation density was observed via transmission electron microscopy (TEM) in the pendeo-epitaxial GaN relative to that in the GaN columns. TEM observations revealed that in pendeo-epitaxial GaN films the dislocations do not propagate laterally from the GaN columns when the structure grows laterally from the sidewalls into and over the trenches. Scanning electron microscopy (SEM) studies revealed that the coalesced regions are either defect-free or sometimes exhibit voids. Above these voids the PEGaN layer is usually defect free.
A new process route for lateral growth of nearly defect free GaN structures via Pendeoepitaxy is discussed. Lateral growth of GaN films suspended from {1120} side walls of [0001] oriented GaN columns into and over adjacent etched wells has been achieved via MOVPE technique without the use of, or contact with, a supporting mask or substrate. Pendeo-epitaxy is proposed as the descriptive term for this growth technique. Selective growth was achieved using process parameters that promote lateral growth of the { 1120) planes of GaN and disallow nucleation of this phase on the exposed SiC substrate. Thus, the selectivity is provided by tailoring the shape of the underlying GaN layer itself consisting of a sequence of alternating trenches and columns, instead of selective growth through openings in SiO2 or SiNx mask, as in the conventional lateral epitaxial overgrowth (LEO).
Two modes of initiation of the pendeo-epitaxial GaN growth via MOVPE were observed: Mode A - promoting the lateral growth of the {1120} side facets into the wells faster than the vertical growth of the (0001) top facets; and Mode B - enabling the top (0001) faces to grow initially faster followed by the pendeo-epitaxial growth over the wells from the newly formed {1120} side facets. Four-to-five order decrease in the dislocation density was observed via transmission electron microscopy (TEM) in the pendeo-epitaxial GaN relative to that in the GaN columns. TEM observations revealed that in pendeo-epitaxial GaN films the dislocations do not propagate laterally from the GaN columns when the structure grows laterally from the sidewalls into and over the trenches. Scanning electron microscopy (SEM) studies revealed that the coalesced regions are either defect-free or sometimes exhibit voids. Above these voids the PEGaN layer is usually defect free.