Crystal distortions modify the propagation of X-rays in single
crystal materials, and X-ray topography can be used to record
these modifications on a film thus providing images of the
distributions and nature of defects, dislocations, strains,
precipitates, etc. in semiconductors. Small variations of contrast,
which often need to be analysed can be rendered invisible.
Furthermore, artefacts in the films must be removed. This study
examines the use of advanced image analysis techniques applied to
a selection of X-ray topographs in section transmission mode: (i)
the automated counting of oxygen-related precipitates and (ii) the
enhancement of Pendellösung fringes. The technique also succeeds
in removing unwanted features in the original x-ray topographs such
as vertical streaking due to collimating slit phase contrast and
strain features near the surface due to the presence of integrated
circuit process strains.