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Labor Unions, Adjuncts, and the Mission and Identity of Catholic Universities
- Gerald J. Beyer
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Catholic social teaching (CST) has long endorsed the right of all workers to unionize. However, many US Catholics exhibit an antiunion bias. In addition, Catholic institutions have engaged in union busting, thereby flouting CST. Focusing on the recent efforts of adjuncts to unionize at Catholic universities, this article argues that union busting jeopardizes the faith and conscience formation of students and undermines the evangelizing mission of Catholic universities. The article debunks the appeal to religious liberty by Catholic institutions to circumvent the National Labor Relations Board's injunctions to allow adjuncts to unionize. It also refutes the argument that the National Labor Relations Act imposes a style of collective bargaining contrary to the harmonious vision of labor relations in CST. Succinctly stated, the article contends there is no legitimate reason for Catholic universities to thwart the unionization efforts of adjuncts, particularly given the systematically unjust work conditions many of them face.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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High Quality NH2SAM (Self Assembled Monolayer) Diffusion Barrier for Advanced Copper Interconnects
- Arantxa Maestre Caro, L. Zhao, Guido Maes, Gustaaf Borghs, Gerald Beyer, Zsolt Tőkei, Silvia Armini, Youssef Travaly
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1249 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1249-F02-01
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- 2010
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The trend for future integrated circuits (IC) is decreasing in size beyond the conventional limits. The recent transition from aluminum to copper as the interconnect material for IC is due to copper's higher resistance to electromigration and its lower resistivity. Unfortunately, copper has high mobility in Si and SiO2 and may cause destruction of electrical connections on the chip. Hence, there is a significant necessity in finding ultra thin, thermally stable, high quality and good adhered diffusion barriers. The most widely used barrier is pure Ta films or layer stacks consisting of Ta and TaN. These have excellent conformality, very good uniformity and high thermal stability. But The continuous scaling down of the interconnect dimensions lead to an essential decrease in the barrier layer effective thickness to less than 5nm; coupled with the replacement of silicon oxide by advanced low-k dielectrics it demand further improvements of the diffusion barrier performance. For that reason Self-assembled monolayers (SAMs), with thicknesses of 2nm or less, have been propose for copper diffusion barrier application. By tailoring the structure of these monomolecular organic films, atomic scale properties can be controlled and selective surfaces and interfaces can be engine as desired for a specific application. In the presented work, the quality of an amino-terminated SAM barrier (NH2SAM) is tested. A high density and the absence of pinholes in the barrier layer are essential for a good barrier performance. First, the macroscopic quality of the NH2SAM barrier has been characterized by Water contact angle (CA) and High resolution AFM (HR-AFM). Secondly, the density and the presence and/or absence of pinholes have been tested by Ellipsometry and Cylic Voltametry (CV). Finally, the intrinsic barrier performance in form of Time- dependent dielectric breakdown (TDDB) lifetime has been extracted from planar capacitor structures that permitted to measure the leakage/Cu diffusion through barrier in the vertical direction. The Contact angle of layers formed at different deposition times show a variation of the hydrophilic SiO2 substrate to hydrophobic already with 1min deposited NH2SAM layer. A 15min deposited NH2SAM (~1nm), results in a continuous and pinhole free layer observed by HR-AFM. The refraction index (η) calculated by ellipsometry, indicates an increase in the density of the layer with the deposition time. On the other hand, cyclic voltametry shows inhibition of the electrochemical reduction of Fe3+ specimen to Fe2+ when NH2SAM are formed on ~2nmSiO2/Si electrodes. A decrease in the capacitive current is observed by increasing the layer thickness and density. The intrinsic barrier performance of the NH2SAM barrier by TDDB is demonstrated with an increase of 10 times the capacitor lifetime by comparing with no barrier system.
Characterization of Plasma Damage in Low-k Films by TVS Measurements
- Ivan Ciofi, Mikhail R. Baklanov, Giovanni Calbo, Zsolt Tőkei, Gerald Beyer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1156 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1156-D01-08
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- 2009
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We evaluated Triangular Voltage Sweep (TVS) measurements as a technique to characterize plasma damage in low-k films. Blanket wafers with low-k films of different porosity and k value were prepared. Our samples included an SiOC:H material with 7% porosity and k value of 3.0, deposited on 200mm wafers, and two SiOC:H materials with 25% porosity and k value of 2.5, deposited on 300mm wafers. Before deposition, a thin layer of dry thermal oxide (2 – 5 nm) was grown on the n-type wafers to stabilize the silicon interface. After deposition, low-k films were exposed to N2/H2 plasma for different times in order to induce different degree of plasma damage. Untreated low-k films were always included as a reference. For electrical measurements, metal dots were deposited on pieces to fabricate Metal-Insulator-Semiconductor capacitors.
TVS measurements were performed at 190°C on the different samples. On samples exposed to N2/H2 plasma, we detected a current peak in the TVS trace, whose magnitude increased with exposure time to plasma. No peaks were detected on untreated films. This indicates that TVS measurements are sensitive to plasma damage. Furthermore, TVS results correlated well with FTIR spectra that showed increasing damage and H2O uptake with increasing exposure time to plasma. We conclude that TVS measurements are suitable for characterizing the degree of plasma damage in low-k films and complement well materials analysis, because with the help of TVS a link to leakage properties can be made. As an application, we used TVS measurements for evaluating restoration of plasma damaged low-k films by long N2-bake at high temperature. Wafer pieces from each sample were baked at 350°C for 4h30min in N2 atmosphere. A few pieces were measured immediately after baking. The remaining pieces were either left exposed to ambient for a few days or dipped in deionized H2O for a few hours to evaluate recovery of hydrophobic properties. The different treatments (N2-bake, exposure to ambient, H2O dipping) were always performed on blanket wafer pieces. Metal dots for electrical measurements were only deposited after the treatment. CV and FTIR measurements were performed before and after treatments to evaluate change in k-value and material structure, respectively. Our data show that long N2-bake at high temperature can partially restore damaged low-k films. The magnitude of the damage-related TVS peak was significantly reduced after heat treatment and remained stable even after H2O dipping. CV measurements performed on baked pieces after 6 days of exposure to ambient showed a reduced k-value. Consistently, FTIR spectra showed a significant reduction of H2O content soon after baking. The materials remained stable over several days and only minor reincorporation of H2O occurred after exposure to ambient or H2O dipping. Therefore, long N2-bake at high temperature can partially restore leakage (TVS), k-value (CV) and hydrophobic properties (FTIR) of damaged low-k films.
TVS Measurements of Metal Ions in Low-k Dielectrics: Effect of H2O Uptake
- Ivan Ciofi, Zsolt Tökei, Giovanni Mangraviti, Gerald Beyer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1079 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1079-N05-08
- Print publication:
- 2008
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Drift of metal ions in low-k dielectrics was investigated by Triangular Voltage Sweep (TVS) measurements on planar capacitors with different gate materials: Al, Ta, Ru, Ti, Cu, Pt and a-Si.
Benefits and Trade-offs in Multi-Level Air Gap Integration
- Romano Hoofman, Roel Daamen, Viet Nguyenhoang, Julien Michelon, Laurent G. Gosset, Vincent Arnal, Jean de Pontcharra, Frederic Gaillard, Rudy Caluwaerts, Christophe Bruynseraede, Gerald Beyer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 914 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0914-F10-01
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- 2006
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In this paper, two different air gap integration approaches are discussed in detail. Firstly, air gaps can be created using sacrificial materials, which are selectively removed through a capping layer either by wet- or dry-etching or by thermal decomposition. The second class benefits from the non-conformal deposition of different CVD dielectrics, which creates air gaps for narrow spaced lines. The benefit of air gaps in terms of capacitance reduction in multilevel interconnects is well known, therefore the authors will mainly concentrate on the challenges associated with the introduction of air gaps in interconnect systems. It will be shown that interconnect containing air gaps does not suffer more from reliability challenges than interconnects with porous low-k dielectrics. Therefore, air gaps can be considered as a viable option for the 32nm node and beyond.
The Love of God and Neighbour according to Aquinas: An Interpretation
- Gerald J. Beyer
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- Journal:
- New Blackfriars / Volume 84 / Issue 985 / March 2003
- Published online by Cambridge University Press:
- 01 January 2024, pp. 116-132
- Print publication:
- March 2003
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Christian theologians’ ruminations on the relationship between the commands to love God and neighbour in the New Testament traverse a broad spectrum. Some posit a unity or even the identity of loving God and the neighbour. Others insist on a clear distinction or disjunction between loving God and loving the neighbour, sometimes pointing to the variance of the scriptural formulations: we are to love God “with all our heart, soul, mind and strength,” whereas we are enjoined to love our neighbour “as ourselves” (cf. Mt 22: 34-40; Mk 12: 28-34; Lk 10:25-29).1 In the Summa Theologiae, Thomas Aquinas deals with this issue under the rubric of charity (caritas) and the respective merits of the active and contemplative life (Il.n. 25-27; II.II. 179-182, 185.2, 188). In the following essay, I will analyze Aquinas’ thought on the relationship between the love of God and neighbour by examining these parts of the Summa. These articles will be the focus of my analysis as they represent the heart of Aquinas’ writing on this issue. However, I will occasionally refer to other parts of the Summa, which either reinforce, clarify or perhaps obfuscate his position.2 I will argue that Aquinas clearly emphasizes both the love of God and neighbour as constitutive elements of the moral life. However, his conception of the relationship between the two remains nebulous in various places. This essay will attempt to elucidate as far as possible the nature of the relationship between the love of God and neighbour according to Aquinas. As we shall see, his thought provides fertile ground for scholarly debate and various interpretations of the precise nature of the relationship between the love of God and neighbour. This essay will offer one possible interpretation.3
Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization
- Alessandra Satta, Gerald Beyer, Karen Maex, Kai Elers, Suvi Haukka, A. Vantomme
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- Journal:
- MRS Online Proceedings Library Archive / Volume 612 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, D6.5.1
- Print publication:
- 2000
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In advanced multi-level metallization schemes, the application of copper as interconnect metal requires the prevention of Cu diffusion into the active area and into interlevel dielectrics by total encapsulation of Cu with barrier films. Critical requirements for diffusion barriers are very small thicknesses, low resistivity, low deposition temperature and conformality on high aspect ratio trenches and vias. For this application, we have studied TiN films deposited by atomic layer chemical vapour deposition (ALCVD) at 400°C and 350°C. This paper discusses the ALCVD TiN films properties and compares them to the properties of TiN deposited by ionized physical vapour deposition (I-PVD).
The ALCVD TiN deposited at 400°C exhibits a resistivity comparable to I-PVD TiN resistivity. However, the ALCVD films deposited at 350°C show higher resistivity. The Cl residue in ALCVD films is 1.5% at 400°C and 3% at 350°C. The microstructure is fine-grained. A very high level of conformality on trenches characterizes the ALCVD TiN films. We believe this property gives a clear advantage over the sputtered I-PVD TiN since its coverage in high aspect ratio trenches and vias is expected to be limited for the future devices interconnection scheme.