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Epitaxial Growth of γ -Al2O3 Insulator Films on Si by Molecular Beam Epitaxy Using an Al Solid Source and N2O Gas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 401 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 39
- Print publication:
- 1995
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- Article
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