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Epitaxial Growth of γ -Al2O3 Insulator Films on Si by Molecular Beam Epitaxy Using an Al Solid Source and N2O Gas

  • H. Wado (a1), T. Shimizu (a1), K. Ohtani (a1), Y. C. Jung (a1) and M. Ishida (a1)...
Abstract

High quality crystalline γ -Al2O3 films were epitaxially grown on Si(111) substrates at growth temperatures from 750 to 900°C by molecular beam epitaxy using an Al solid source and N2O gas. Very thin γ -Al2O3 films grown at a growth temperature of 850°C showed streaky reflection high-energy electron diffraction patterns. By in situ x-ray photoelectron spectroscopy measurements, carbon contamination, as is seen in the films grown with a Al(CH3)3 source, was not detected within the measurement sensitivity. The stoichiometry of the grown film was found to be similar to that of Al2O3. Growth rates of epitaxial γ -Al2O3 layers decreased with increasing growth temperatures. The predominant growth of the γ -Al2O3(111) crystal orientation was confirmed on Si(110) and Si(100) substrates.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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