A new shift register using p-type poly-Si thin-film transistors (TFTs) for active matrix display is proposed. It utilizes only p-type TFTs to simplify the fabrication process, and provides time-shifted output signals with a voltage swing from VSS to VDD without signal-level loss. In the proposed shift register, output is structurally separated from carry and therefore has a high immunity to output signal distortion caused by output load capacitance. We also propose a new light emitting control method using this shift register for high image quality active-matrix organic light emitting diode (AMOLED) displays. The proposed shift register was verified by simulation and measurement.