3 results
Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 301-303
- Print publication:
- July 2004
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Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 415-418
- Print publication:
- July 2004
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Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 311
- Print publication:
- 1997
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