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Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

Published online by Cambridge University Press:  15 July 2004

J. Bak-Misiuk ,
A. Misiuk ,
J. Ratajczak ,
A. Shalimov ,
I. Antonova  and
J. Trela
J. Bak-Misiuk*
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
A. Misiuk
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
J. Ratajczak
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
A. Shalimov
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
I. Antonova
Affiliation:
Institute of Semiconductor Physics, RAS, 630090 Novosibirsk, Russia
J. Trela
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
*
bakmi@ifpan.edu.pl
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Abstract

Defects in the Si layered structures, Si:H(D), prepared by implantation with H2+/D+, and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM). Such treatment affects out-diffusion of hydrogen (deuterium) as well as the shape and concentration of the H(D)-filled cavities. The relation between X-ray and XTEM results is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 415 - 418
Copyright
© EDP Sciences, 2004

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References

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