3 results
A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K7.9
- Print publication:
- 2002
-
- Article
- Export citation
Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K1.4
- Print publication:
- 2002
-
- Article
- Export citation
Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.6
- Print publication:
- 2000
-
- Article
- Export citation