Integrating oxide heterostructures on silicon has the potential to leverage the
multifunctionalities of oxide systems into semiconductor device technology. We
present the growth and characterization of two-dimensional electron gas (2DEG)
oxide systems LaTiO3/SrTiO3 (LTO/STO) and
GdTiO3/SrTiO3 (GTO/STO) on Si(001). We show
interface-based conductivity in the oxide films and measure high electron
densities ranging from ∼9 × 1013 cm-2
interface-1 in GTO/STO/Si to ∼9 ×
1014 cm-2 interface-1 in LTO/STO/Si. We
attribute the higher measured carrier density in the LTO/STO films to a higher
concentration of interface-bound oxygen vacancies arising from a lower oxygen
partial pressure during growth. These vacancies donate conduction electrons and
result in an increased measured carrier density. The integration of such 2DEG
oxide systems with silicon provides a bridge between the diverse electronic
properties of oxide systems and the established semiconductor platform and
points toward new devices and functionalities.