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Contributors
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- By Waiel Almoustadi, Brian J. Anderson, David B. Auyong, Michael Avidan, Michael J. Avram, Roland J. Bainton, Jeffrey R. Balser, Juliana Barr, W. Scott Beattie, Manfred Blobner, T. Andrew Bowdle, Walter A. Boyle, Eugene B. Campbell, Laura F. Cavallone, Mario Cibelli, C. Michael Crowder, Ola Dale, M. Frances Davies, Mark Dershwitz, George Despotis, Clifford S. Deutschman, Brian S. Donahue, Marcel E. Durieux, Thomas J. Ebert, Talmage D. Egan, Helge Eilers, E. Wesley Ely, Charles W. Emala, Alex S. Evers, Heidrun Fink, Pierre Foëx, Stuart A. Forman, Helen F. Galley, Josephine M. Garcia-Ferrer, Robert W. Gereau, Tony Gin, David Glick, B. Joseph Guglielmo, Dhanesh K. Gupta, Howard B. Gutstein, Robert G. Hahn, Greg B. Hammer, Brian P. Head, Helen Higham, Laureen Hill, Kirk Hogan, Charles W. Hogue, Christopher G. Hughes, Eric Jacobsohn, Roger A. Johns, Dean R. Jones, Max Kelz, Evan D. Kharasch, Ellen W. King, W. Andrew Kofke, Tom C. Krejcie, Richard M. Langford, H. T. Lee, Isobel Lever, Jerrold H. Levy, J. Lance Lichtor, Larry Lindenbaum, Hung Pin Liu, Geoff Lockwood, Alex Macario, Conan MacDougall, M. B. MacIver, Aman Mahajan, Nándor Marczin, J. A. Jeevendra Martyn, George A. Mashour, Mervyn Maze, Thomas McDowell, Stuart McGrane, Berend Mets, Patrick Meybohm, Charles F. Minto, Jonathan Moss, Mohamed Naguib, Istvan Nagy, Nick Oliver, Paul S. Pagel, Pratik P. Pandharipande, Piyush Patel, Andrew J. Patterson, Robert A. Pearce, Ronald G. Pearl, Misha Perouansky, Kristof Racz, Chinniampalayam Rajamohan, Nilesh Randive, Imre Redai, Stephen Robinson, Richard W. Rosenquist, Carl E. Rosow, Uwe Rudolph, Francis V. Salinas, Robert D. Sanders, Sunita Sastry, Michael Schäfer, Jens Scholz, Thomas W. Schnider, Mark A. Schumacher, John W. Sear, Frédérique S. Servin, Jeffrey H. Silverstein, Tom De Smet, Martin Smith, Joe Henry Steinbach, Markus Steinfath, David F. Stowe, Gary R. Strichartz, Michel M. R. F. Struys, Isao Tsuneyoshi, Robert A. Veselis, Arthur Wallace, Robert P. Walt, David C. Warltier, Nigel R. Webster, Jeanine Wiener-Kronish, Troy Wildes, Paul Wischmeyer, Ling-Gang Wu, Stephen Yang
- Edited by Alex S. Evers, Washington University School of Medicine, St Louis, Mervyn Maze, University of California, San Francisco, Evan D. Kharasch, Washington University School of Medicine, St Louis
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- Book:
- Anesthetic Pharmacology
- Published online:
- 11 April 2011
- Print publication:
- 10 March 2011, pp viii-xiv
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Sequential Lateral Solidification of Ultra-Thin a-Si Films
- Hans S. Cho, Dongbyum Kim, Alexander B. Limanov, Mark A. Crowder, James S. Im
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- Journal:
- MRS Online Proceedings Library Archive / Volume 621 / 2000
- Published online by Cambridge University Press:
- 14 March 2011, Q9.9.1
- Print publication:
- 2000
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This paper demonstrates that Sequential Lateral Solidification (SLS) of Si can be carried out on films as thin as – and potentially much thinner than – 250 Å. When compared to thicker Si films, however, the SLS-processed ultra-thin films contain more twins, and successful processing requires irradiation within a narrower laser energy density range and a smaller per-pulse translation distance. The physical interpretation of these findings is formulated by analyzing the details of the microstructures observed in single-pulse-irradiation-induced Controlled Super-Lateral Growth (C-SLG) experiments. SEM and TEM analyses reveal complicated microstructural details that we interpret as originating from breakdown of epitaxial growth during lateral solidification, an effect that is detrimental to the SLS process. Based on considerations of far-from- equilibrium solidification behavior of Si, it is argued that undercooling of the solidification interface below a threshold value at which solidification no longer proceeds epitaxially – arising from reduction in interfacial recalescence during lateral solidification of ultra-thin Si films, relative to that of thicker films – is responsible for the breakdown. Based on this model, we discuss how external parameters may be adjusted so as to permit optimal crystallization of ultra-thin Si films using SLS.
Production and Characterization of Metal-Encapsulated Fullerenes
- Robert D. Johnson, Costantino S. Yannoni, Mark Hoinkis, Mattanjah de Vries, Jesse R. Salem, Mark S. Crowder, Donald S. Bethune
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- Journal:
- MRS Online Proceedings Library Archive / Volume 270 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 261
- Print publication:
- 1992
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We report here the arc-production and spectroscopic characterization of fullerene-encapsulated metal atoms and metal-atom clusters. In particular, both solution and solid-stateelectron paramagnetic resonance (EPR) spectra of LaC82', YC82', SCC82' and Sc3 C82 have been obtained. Additional species containing rareearth atoms and clusters have been produced. The results suggest, for example, that the three scandium atoms in Sc3C82 form a molecule In the shape of an equilateral triangle — as was previously suggested for Sc3 molecules Isolated In a cryogenic rare-gas matrix. The spectraof the MC82 species (M =La, Y, Sc) exhibit small hyperfine couplings and g-values close to 2, suggesting that they can be described as a +3 metal cations within – 3 fullerene radical anion cages. Sc2C2n species — the most abundant metailofuilerenes In the scandlum-fullerene mass spectrum — are EPR-silent, even though Sc2 is EPR-actlve In a rare-gas matrix at 4.2K. A broader Implication of this work Is that production of macroscopic quantities of metal-containing fullerenes may make possible the fabrication of exotic new structures with regular arrays of metal atoms or clusters Isolated in fullerene molecules, resulting in new typesof host/guest nanostructured materials.