Thin films of PbZrO3-Pb(Zn0.33Nb0.67)03, with PZN contents of 8- 12%, were fabricated through the sol-gel spin-on technique. The structural, low frequency capacitive, and polarization reversal characteristics were investigated as a function of composition in this solid solution system. The switching of ferroelectric polarization was tested by a sequence of square wave pulses consisting of two positive pulses followed by two negative pulses. Compositions with higher PZN contents are promising for switching applications; the films were typically characterized by a switched charge of 4-14 μC/cm2, coercive field of around 30 kV/cm, and relative permittivity of 400-800.