8 results
Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.34.1
- Print publication:
- 2001
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A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in InxGa1−x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 167-173
- Print publication:
- 2000
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A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the in Incorporation Efficiency in inxGa1−x/GaN Heterostructures Grown by Rf Plasma-Assisted Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.27
- Print publication:
- 1999
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Kinetics of Nitrogen in GaAsN Layers During GaAs Overgrowth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 209
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- 1996
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MBE Growth and Characterization of InSb/AlxIn1−xSb Strained Layer Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 97
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- 1996
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Anion Exchange Reactions and initial Gan Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 388 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 259
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- 1995
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Tunneling Spectroscopy of Single-Crystal CoSi2 and NiSi2 Epilayers on n-type Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 67 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 227
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- 1986
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Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 54 / 1985
- Published online by Cambridge University Press:
- 26 February 2011, 479
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- 1985
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