Semiconductor ZnSe microcrystal-doped SiO2 glass thin films were prepared by the RF-magnetron sputtering method. The particle size of ZnSe microcrystals in the films depended on sputtering conditions such as input power, substrate temperature, and relative surface area ratio (ZnSe/SiO2) in the target. The blue shift of the optical absorption edge was observed in these glass films. This blue shift energy was explained in terms of the independent confinement of electrons and positive holes, Coulomb force and the influence of a collapsed exciton and the dielectric constant of the matrix glass being taken into consideration.