The thermoelectric power of silicon micro-samples
grown by Czochralski method (Cz-Si) and annealed at 450 °C has
been investigated at enhanced pressure up to 16 GPa. The correlation
has been established between the thermoelectric power and pressure
of the semiconductor-metal phase transition, on the one hand,
and mechanical properties (microhardness, compressibility), on
the other, for Cz-Si with different content of oxygen. Possible
application of the studied properties for micro-device technology
is discussed.