The imprinted insulin-like growth factor 2 gene (IGF2) encodes a fetal mitogenic hormone protein (IGF-II) and has previously been shown to be associated with performance in dairy cattle. In this study we assessed genotype-phenotype associations between four single nucleotide polymorphisms (SNPs) located within the bovine IGF2 locus on chromosome 29 and a range of performance traits related to milk production, animal growth and body size, fertility and progeny survival in 848 progeny-tested Irish Holstein-Friesian sires. Two of the four SNPs (rs42196909 and IGF2.g-3815A>G), which were in strong linkage disequilibrium (r2=0·995), were associated with milk yield (P⩽0·01) and milk protein yield (P⩽0·05); the rs42196901 SNP was also associated (P⩽0·05) with milk fat yield. Associations (P⩽0·05) with milk fat percentage and milk protein percentage were observed at the rs42196901 and IGF2.g-3815A>G SNPs, respectively. The rs42196909 and IGF2.g-3815A>G SNPs were also associated with progeny carcass conformation (P⩽0·05), while an association (P⩽0·01) with progeny carcass weight was observed at the rs42194733 SNP locus. None of the four SNPs were associated with body size, fertility and progeny survival. These findings support previous work which suggests that the IGF2 locus is an important biological regulator of milk production in dairy cattle and add to an accumulating body of research showing that imprinted genes influence many complex performance traits in cattle.

The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid thermal chemical vapor deposition (RTCVD). The local structure around the Ge atom was probed using Ge K-edge x-ray absorption fine structure spectroscopy (XAFS) to determine the effects of the B and C on the Ge sites. The concentration profiles obtained from secondary ion mass spectroscopy are correlated with the Ge XAFS results. The modifications on the local structure around the Ge atoms are revealed from the multiple scattering analyses on the Ge near-neighbors. First and second shell XAFS fits to the B doped SiGe samples indicate a direct evidence of the Ge trapping of the B atoms whereas the C is randomly distributed to the Si lattice sites.

Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2 implanted Si wafers in order to probe these clusters from a local structural point of view. Ge K-edge x-ray absorption spectroscopy (XAFS) is a powerful tool in obtaining local structural information around the Ge atom. The effects of different implant species with various implant doses and annealing conditions on the cluster formation are presented using Ge K-edge multi-shell XAFS analysis. The non-linear least-squares fits to the Ge K-edge Fourier Transformed (FT) XAFS data using calculated standards from multiple scattering simulations around the Ge atom reveal formed Ge-B clusters for the Rapid Thermal Processing (RTP) annealed wafers. The results also indicate the laser annealing process on the other hand is blocking the formation of these Ge induced Ge-B clusters.

New, non-routine metrology issues are addressed for three kinds of materials and processes that are necessary for the fabrication of ultra-high speed devices. We look at the problems and solutions for measuring both stoichiometry and dopant content of SiGe material when using Cs primary ion bombardment. We examine the challenges of determining the N content of ultra-thin SiON gate dielectrics with emphasis on what will be necessary for the measurement of 1nm thick oxides. And finally we show some promising early results of using a new protocol for measuring ULE B ion implant profiles in the top 3nm with emphasis on obtaining a more realist profile shape in this region for TCAD modeling purposes.

The National Technology Roadmap of Semiconductors (NTRS) shows that future semiconductor processing will require the formation of junctions less than 30nm deep with gate lengths approaching, and becoming less than, 0.lum. Techniques must be available to measure these in-depth, as well as spatial, distributions.

Secondary ion mass spectrometry (SIMS) has long been the technique of choice for measuring dopant profiles in semiconductors. The depth of the junctions formed has, up top now, always been sufficiently deep into the semiconductor that the effects of the analysis on the measured profile (i.e. atomic mixing) could be ignored for the most part. In addition, gate lengths have been sufficiently large that diffusion of LDD implants under the gate have not contributed significantly to short-channel effects. However, the relentless decrease in the required junction depths and gate lengths may mean that the situation may change in the near future.

This paper describes how secondary ion mass spectrometry can be used effectively in semiconductor device materials and process development. A short overview of the experimental technique is given followed by applications in the following areas:

1) Basic research

2) New Process Development

3) Trouble-shooting current processing

4) Analysis of competitor's devices.