Background: Infection prevention and control (IPC) workflows are often retrospective and manual. New tools, however, have entered the field to facilitate rapid prospective monitoring of infections in hospitals. Although artificial intelligence (AI)–enabled platforms facilitate timely, on-demand integration of clinical data feeds with pathogen whole-genome sequencing (WGS), a standardized workflow to fully harness the power of such tools is lacking. We report a novel, evidence-based workflow that promotes quicker infection surveillance via AI-assisted clinical and WGS data analysis. The algorithm suggests clusters based on a combination of similar minimum inhibitory concentration (MIC) data, timing of sample collection, and shared location stays between patients. It helps to proactively guide IPC professionals during investigation of infectious outbreaks and surveillance of multidrug-resistant organisms and healthcare-acquired infections. Methods: Our team established a 1-year workgroup comprised of IPC practitioners, clinical experts, and scientists in the field. We held weekly roundtables to study lessons learned in an ongoing surveillance effort at a tertiary care hospital—utilizing Philips IntelliSpace Epidemiology (ISEpi), an AI-powered system—to understand how such a tool can enhance practice. Based on real-time case discussions and evidence from the literature, a workflow guidance tool and checklist were codified. Results: In our workflow, data-informed clusters posed by ISEpi underwent triage and expert follow-up analysis to assess: (1) likelihood of transmission(s); (2) potential vector(s) identity; (3) need to request WGS; and (4) intervention(s) to be pursued, if warranted. In a representative sample (spanning October 17, 2019, to November 7, 2019) of 67 total isolates suggested for inclusion in 19 unique cluster investigations, we determined that 9 investigations merited follow-up. Collectively, these 9 investigations involved 21 patients and required 115 minutes to review in ISEpi and an additional 70 minutes of review outside of ISEpi. After review, 6 investigations were deemed unlikely to represent a transmission; the other 3 had potential to represent transmission for which interventions would be performed. Conclusions: This study offers an important framework for adaptation of existing infection control workflow strategies to leverage the utility of rapidly integrated clinical and WGS data. This workflow can also facilitate time-sensitive decisions regarding sequencing of specific pathogens given the preponderance of available clinical data supporting investigations. In this regard, our work sets a new standard of practice: precision infection prevention (PIP). Ongoing effort is aimed at development of AI-powered capabilities for enterprise-level quality and safety improvement initiatives.

Funding: Philips Healthcare provided support for this study.

Disclosures: Alan Doty and Juan Jose Carmona report salary from Philips Healthcare.

Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

Thin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0 % in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0 %. The transmittance spectra were found to be in the range of 77 to 89 %. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26 × 10−3 to 4.08 × 10−1 Ω−cm for the increase in OVP from 1.4 to 4.1 %, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm.

This work deals with the study of the role of the film thickness and composition on the color selectivity of the collecting spectrum of glass/ZnO:Ga/p-a-Si1-xCx:H/ a-Si1-xCx:H /a-Si:H/n-a-Si:H/Al photoelectronic detectors produced in a single chamber plasma enhanced chemical vapor deposition (PECVD) system. The cross contaminations were minimized by a rotate-cover substrate holder system. The devices can detect the blue illumination at small reverse bias and detect red illumination at large reverse bias. The role of the process parameters, especially the thickness of the p-type and intrinsic a-Si1-xCx:H, and the intrinsic a-Si:H layers on the device performances were studied in detail aiming to achieve a better detectivity.

In this work we study the optical and electrical behavior of ZnO:Ga, ITO and IZO films deposited on glass after sustaining different hydrogen plasma conditions and exposure times. This work was complemented by analyzing the surface morphology of the set of films, which allow us to determine the role of hydrogen plasma on the film's properties such as Hall mobility, free carrier concentration, sheet resistance, optical transmittance, figure of merit and state of the surface. Apart from that, the performances of solar cells using an intrinsic layer constituted by nanocrystalline silicon will be also presented. The data show that the electrical properties of solar cells were improved by using ZnO:Ga as front contact, allowing a high current density collection and single pin solar cells with efficiencies exceeding 11%.

The aim of this work is to optimize the metal/silicon ratio on nickel metal induced crystallization of silicon. For this purpose amorphous silicon layers with 80, 125 and 220 nm thick were used on the top of which 0.5 nm of Ni was deposited and annealed during the required time to full crystallize the a-Si. The data show that the 80 nm a-Si layer reaches a crystalline fraction of 95.7% (as detected by spectroscopic ellipsometry) after annealed for only 2 hours. No significant structural improvement is detected by ellipsometry neither by XRD when annealing the films for longer times. However, on 125 nm thick samples, after annealing for 2 hours the crystalline fraction is only 59.7%, reaching a similar value to the one with 80 nm only after 5 hours, with a crystalline fraction of 92.2%. Here again no significant improvements were achieved by using longer annealing times. Finally, the 220 nm thick a-Si sample is completely crystallized only after 10 hours annealing. These data clear suggest that the crystallization of thicker a-Si layers requires thicker Ni films to be effective for short annealing times. A direct dependence of the crystallization time on the metal/silicon ratio was observed and estimated.

It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose an electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (≤ 500 Ω), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 kΩ in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed.

In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 × 10-4 ωcm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.

In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5×10−1 to 2.9×10−3 ωcm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.

This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 m m (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device nonlinearity increases to values above 4%.

We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.