15 results
Single Grain Si TFTs Fabricated at 100oC for Microelectronics on a Plastic Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 989 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0989-A09-05
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- 2007
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Preparation of Large, Location-Controlled SI Grains by Excimer Laser Crystallization of α-SI FILM SPUTTERED AT 100°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 910 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0910-A21-12
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- 2006
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Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 910 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0910-A19-02
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- 2006
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Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States under Light Exposure.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 862 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, A13.1
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- 2005
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Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 808 / 2004
- Published online by Cambridge University Press:
- 21 March 2011, A2.3
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- 2004
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The Role of Charged Gap States in Light-Induced Degradation of Single-Junction a-Si:H Solar Cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 808 / 2004
- Published online by Cambridge University Press:
- 21 March 2011, A5.8
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- 2004
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Temperature Dependent Carrier Transport in Single-Crystalline Si TFTs inside a Location-Controlled Grain
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- Journal:
- MRS Online Proceedings Library Archive / Volume 814 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, I2.7/A3.7
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- 2004
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Evolution of Charged Gap Statesin a- Si:H Under Light Exposure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 762 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A12.6
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- 2003
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I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 609 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, A10.3
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- 2000
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The Properties of a-SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 557 / 1999
- Published online by Cambridge University Press:
- 15 February 2011, 43
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- 1999
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Effect of Interface Roughness on Light Scattering and Optical Properties of a-Si:H Solar Cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 557 / 1999
- Published online by Cambridge University Press:
- 15 February 2011, 725
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- 1999
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Device Modeling of a-Si:H Alloy Solar Cells: Calibration Procedure for Determination of Model Input Parameters
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- Journal:
- MRS Online Proceedings Library Archive / Volume 507 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 409
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- 1998
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Accurate Light Absorption Profile in Tandem A-SI:H Solar Cells on Textured TCO Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 705
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- 1994
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Enhanced Light Absorption in a-Si:H Layers of Solar Cells by Applying Tco/Metal Back Contacts
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- Journal:
- MRS Online Proceedings Library Archive / Volume 297 / 1993
- Published online by Cambridge University Press:
- 01 January 1993, 845
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- 1993
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Modeling of a-Si:H Solar Cells on V-Grooved Glass Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 297 / 1993
- Published online by Cambridge University Press:
- 01 January 1993, 851
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- 1993
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