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Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States under Light Exposure.

Published online by Cambridge University Press:  01 February 2011

M. Zeman ,
V. Nádaždy ,
R. Durný  and
J.W. Metselaar
M. Zeman
Affiliation:
Delft University of Technology – DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
V. Nádaždy
Affiliation:
Delft University of Technology – DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands Institute of Physics, SAS, Dúbravskácesta 9, 845 11 Bratislava, Slovakia
R. Durný
Affiliation:
Slovak University of Technology, Ilkovièova 3, 812 19 Bratislava, Slovakia
J.W. Metselaar
Affiliation:
Delft University of Technology – DIMES, P.O. Box 5053, 2600 GB Delft, The Netherlands
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Abstract

The evolution of the programmed defect-state distributions in intrinsic hydrogenated amorphous silicon (a-Si:H) due to light soaking was qualitatively determined from charge deep-level transient spectroscopy. The defect-state distribution in a-Si:H was programmed by applying a particular bias voltage on the metal-oxide-semiconductor structure while annealing the structure above the equilibration temperature. The programmed distributions simulate defect-state distributions in different parts of an actual a-Si:H solar cell, particularly in the intrinsic regions close to the p/i and i/n interfaces.

The defect-state distribution in the bulk of the intrinsic layer is characterized by comparable contributions from the positively charged defect states above midgap, Dh , neutral states, Dz , and negatively charged states below midgap, De . In the programmedp-type (n-type) defect-state distribution there is an excess of the Dh (De ) states. Light exposure modifies the p-type distribution that evolves to a broad distribution of states with a maximum around midgap. This distribution is dominated by Dz states with substantial contributions from Dh and De states. In case of n-type distribution light soaking only slightly influences the distribution by removing a part of the Dh states and by a small increase of Dz and De states.

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