Electromagnetic heating provides a novel alternative to “illumination-based” rapid thermal processing techniques. Exposure to radiation, in the RF and microwave frequency regimes, rapidly heats silicon (∼125°C/sec) to temperatures in excess of 1000°C without the use of a susceptor. These ramp rates make this technology suitable for the activation of shallow implanted dopants, and satisfaction of the 100 nm technology node has been achieved. Furthermore, the presence of high frequency electric fields creates ponderomotive forces that may alter the kinetics of dopant activation and diffusion. These additional driving forces could, once fully understood, lead to an enhanced activation mechanism that activates sufficient dopants to satisfy the 70 nm technology node at temperatures less than 1000°C.