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We present the results of a high-resolution CO-line survey using the Nobeyama Millimeter-wave Array at high-angular (⋐ 2–3″) and high spectral resolutions for the 15 CO-richest Virgo spirals. We derived exact rotation curves using position-velocity diagrams by applying the iteration method. the obtained RCs rise steeply in the central 100 pc. Surface-mass-density distributions by direct deconvolution of the RCs show massive cores of ⋐ 109M⊙ within 100 pc, suggesting the existence of DM cusps in the centres. Five galaxies were found to nest single-peaked extremely high-density molecular cores, where star formation is currently suppressed by the high differential rotation. We show that the deeper is the gravitational potential, the higher is the central gas density.
We have made a CO(J=2-1) observations using the Nobeyama 45m telescope aimed at examining the physical properties of the molecular gas in this object. The upper limit obtained is 1.8 mK (3σ) at a velocity resolution of 100 km s−1, which leads to an upper limit on the molecular gas mass of 5.3 × 1011M⊙, if we assume a line width of 250 km s−1 obtained in the CO(J = 5 - 4) line (rest-frame) and the Galactic CO-to-H2 conversion factor of 4.5 (M⊙ K km s−1 pc2). The line ratio between the 2–1 line and the 5–4 line as well as those from the 7–6 and the 4–3 lines (Omont et al. 1996, Nature, 382, 428) imply that the mean gas density is as high as 103–5 cm−3, which is comparable to that in nearby star burst galaxies (e.g., Solomon et al. 1992, ApJ, 387, L55).
We have made a CO (J=2−1) observation using the Nobeyama 45m telescope aimed at examining physical properties of the molecular gas in the object. Upper limit obtained is 1.8 mK (3σ) at a velocity resolution of 100 km s−1, which leads to an upper limit on the molecular gas mass of 5.3 × 1011M⊙, if we assume a line width of 250 km s−1 obtained in J = 5–4 line and the Galactic CO-to-H2 conversion factor of 4.5 M⊙ K km s−1 pc2. The line ratio between 2–1 line and 5–4 line as well as those from 7–6 and 4–3 lines (Omont et al. 1996) imply that the mean gas density is as high as 103–5 cm−3, which is comparable to that in nearby star burst galaxies (e.g., Solomon et al. 1992).
Since the bulk of the energy density of the Cosmic X-ray Background (CXB) resides in the harder energy band than that of the ROSAT band (0.5-2 keV) and since the X-ray sources identified in the ROSAT band have X-ray spectra softer than that of the CXB, investigation of nature of the X-ray sources at the harder energy band is indispensable to solve the origin of the CXB. However, only 2-3% of the CXB in the hard band (2-10 keV) had been resolved into discrete sources (Piccinotti et al. 1982, ApJ 253, 485). We present our preliminary results of optical follow-up observations of the ASCA Lynx deep survey.
We report the results of near-infrared observations of a type-2 QSO, AX J08494+4454 at z = 0.9 which was identified in our optical follow-up observations of the ASCA Lynx deep survey. This object has a hard X-ray spectrum with an X-ray luminosity of about 1×1044 erg s−1 in 2–10 keV. The optical spectrum shows high-excitation and high-ionization lines but no significant broad Hβ emission. These properties strongly suggest that this object is a “type-2” QSO (Ohta et al. 1996).
The effects of TiCl4 post-treatment on the physicochemical properties of porous TiO2 (pTiO2) layers fabricated at 300 °C and 400 °C (denoted as pTiO2(300) and pTiO2(400), respectively) in CH3NH3PbI3 perovskite photovoltaic cells were investigated. Water contents (physisorbed water and water derived from surface hydroxyl groups) of pTiO2(300) and pTiO2(400) before and after TiCl4 post-treatment were measured by using temperature desorption spectroscopy (TDS). Moreover, structural analysis of the CH3NH3PbI3 perovskite part was performed by X-ray diffraction (XRD). In the case of pTiO2(300), the content of water was increased by the TiCl4 post-treatment due to the removal of residual organic compounds that existed before the treatment. It then caused a change in the surface activity of pTiO2(300) and enhancement of solar cell performance and photocurrent density, though suppression of CH3NH3PbI3 perovskite formation occurred. In comparison, contents of water were decreased for pTiO2(400), leading to enhancement of the conversion of PbI2 to CH3NH3PbI3 perovskite. As a result, there were significant increases in short circuit current density (Jscs) and PCEs. The results showed that TiCl4 post-treatment is an effective approach to prepare high-performance CH3NH3PbI3 perovskite solar cells without heat treatment at a very high temperature.
Δ14C values of leaves of deciduous trees provide a means to map the regional-scale fossil fuel ratio in the atmosphere. We collected a batch of ginkgo (Ginkgo biloba Linnaeus, a deciduous tree) leaf samples from across Korea in the month of July in both 2010 and 2011 to obtain the regional distribution of Δ14C. The Δ14C values of the samples were measured using accelerator mass spectrometry (AMS) at the Korea Institute of Geoscience and Mineral Resources (KIGAM). The average of the Δ14C values from clean air sites in Korea in 2011 measured slightly lower than the average of Δ14C values in 2010. Distribution maps of Δ14C of 2011 and 2010 in Korea were made based on a series of Δ14C values of ginkgo leaf samples from Korea using the Geostatistical and Spatial analyst tools in ESRI's ArcMap software. The distribution maps of Δ14C showed that Δ14C values in the western part of Korea are lower than those in the eastern part of Korea. This is because the western part of Korea is densely populated and contains many industrial complexes, and also because westerly winds from China, containing CO2 from fossil fuel use, blow into Korea. We compared the distribution maps of 2010 and 2011 and tried to find traces of the Fukushima power plant accident in Japan.
We have conducted 1.1 mm ALMA observations of a contiguous 105” × 50” or 1.5 arcmin2 window in the SXDF-UDS-CANDELS. We achieved a 5σ sensitivity of 0.28 mJy, giving a flat sensus of dusty star-forming galaxies with LIR ~6×1011L⊙ (if Tdust=40K) up to z ~ 10 thanks to the negative K-correction at this wavelength. We detected 5 brightest sources (S/N>6) and 18 low-significant sources (5>S/N>4; they may contain spurious detections, though). One of the 5 brightest ALMA sources (S1.1mm = 0.84 ± 0.09 mJy) is extremely faint in the WFC3 and VLT/HAWK-I images, demonstrating that a contiguous ALMA imaging survey uncovers a faint dust-obscured population invisible in the deep optical/near-infrared surveys. We find a possible [CII]-line emitter at z=5.955 or a low-z CO emitting galaxy within the field, allowing us to constrain the [CII] and/or CO luminosity functions across the history of the universe.
Corynebacterium ulcerans (toxigenic C. ulcerans) produces the diphtheria toxin, which causes pharyngeal and cutaneous diphtheria-like disease in people, and this bacterium is commonly detected in dogs and cats that are reared at home. It is considered dangerous when a carrier animal becomes the source of infection in people. To investigate the carrier situation of toxigenic C. ulcerans of cats bred in Japan, bacteria were isolated from 37 cats with a primary complaint of rhinitis in 16 veterinary hospitals in Osaka. Toxigenic C. ulcerans was detected in two of the cats. By drug sensitivity testing, the detected bacterium was sensitive to all investigated drugs, except clindamycin. It appears necessary to create awareness regarding toxigenic C. ulcerans infection in pet owners because this bacterium is believed to be the causative organism for rhinitis in cats.
Vacancy-type defects in 60-keV Be+-implanted GaAs and InP were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects and pre-existed interstitial-type defects in p-type GaAs. The defects induced by ion implantation in InP were also studied.
We present the results of the Nobeyama Radio Observatory (NRO) M 33 All Disk (30′ × 30′,
or 7.3 kpc × 7.3 kpc) Survey of Giant Molecular Clouds (NRO MAGiC) based on
12CO(J = 1–0) observations using the NRO 45-m telescope and
12CO(J = 3–2) observations using the ASTE 10-m telescope.
The spatial resolution of the resultant 12CO(J = 1–0) map is
193, corresponding to 81 pc, which is sufficient to identify each Giant Molecular Cloud
(GMC) in the disk. We found clumpy structures with a typical spatial scale of
~100 pc, corresponding to GMCs, and no diffuse, smoothly distributed component
of molecular gas at this sensitivity.
We obtained a map of the molecular fraction,
fmol = ΣH2/(ΣHi + ΣH2),
at a 100-pc resolution. This is the first fmol map covering an
entire galaxy with a GMC-scale resolution. The correlation between
fmol and gas surface density shows two distinct sequences.
The presence of two correlation sequences can be explained by differences in metallicity,
i.e., higher (~2-fold) metallicity in the central region
(r < 1.5 kpc) than in the outer parts. Alternatively,
differences in scale height can also account for the two sequences, i.e.,
increased scale height toward the outer disk.
CoFe2O4/α-Fe2O3 (ferrimagnetic / antiferromagnetic) bilayered films were prepared on α-Al2O3(102) single-crystalline substrates by helicon plasma sputtering. A well-crystallized epitaxial α-Fe2O3(102) layer was formed on the substrate, while CoFe2O4 grown on α-Fe2O3(102) was a polycrystalline layer with a (100)-preferred orientation. The α-Fe2O3(102) films without CoFe2O4 layers clearly showed a spin-flip transition at about 400 K. The spins aligned perpendicular to the film plane at room temperature changed their direction within the film plane above 400 K. However the α-Fe2O3 base layers of CoFe2O4/α-Fe2O3 bilayered films did not show any spin-flip transition. The CoFe2O4 layer on α-Fe2O3 had a large in-plane magnetic anisotropy, while the spin axis of the α-Fe2O3(102) base layer was directed perpendicular to the film plane. The magnetization of ferrimagnetic CoFe2O4 layers was coupled perpendicularly to the spin axis of anitiferromagnetic α-Fe2O3 layers due to the exchange coupling at the interface between CoFe2O4 and α-Fe2O3.
Optical properties of fully-strained wurtzite and zincblende InxGa1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.
After the review of dopant redistribution phenomena observed during formation of near noble metal suicides, we describe the results of our recent experiments to get a better understanding of a mechanism of the dopant redistribution phenomenon in Si substrates. The key factors to understand the dopant redistribution are dopant segregation at the suicide/ Si interface due to lower solubility limit of dopants in suicides, enhanced diffusion of dopants into the Si substrate at much lower temperatures than the ordinary thermal diffusion, and electrical activation of the redistributed dopants. The results of As and carrier concentration measurements before and after Pd2Si formation to make clear the third factor show that the electrical activity of the redistributed As atoms in Si is strongly dependent on the initial activity before Pd2Si formation which is controlled by the temperature for the pre-annealing of As implanted Si.
Shrinkage of extrinsic dislocation loops introduced by As implantation and subsequent annealing have been observed after Pd2Si formation, which is a good evidence of vacancy generation during Pd2Si formation. The role of the vacancies and interstitials on the second factor, the enhanced diffusion, has also been discussed. Finally we list a few issues to be answered in future by more detailed works in order to get a complete understanding of the redistribution phenomenon.
We have been developing a low energy Ne atom scattering system combined with a time-of-flight spectrometer for insulator surface structural analysis. Insulator surface structure is difficult to study because of charging effects during electron or ion beam bombardment. Structural analyses of insulator surfaces are very important in fundamental research as well as technology fields. In our system, charged ion beams of 2 keV-Ne+ are converted into neutral beams by charge exchange with the same element gas after the primary beam passes through a chopper. Other features of this system are pulsed beams, time-of-flight measurements, and a micochannel plate (MCP) detector is coaxially mounted along the primary beam. This is a home made equipment. We will show the detection systems, as well.
Thin films of a charge transfer complex, hepta-(tetrathiafulvalene) pentaiodide ( TTF7I5, TTF:I0-71 ), were prepared by double source evaporation of TTF and iodine. Crystalline films of TTF:I0-7i were obtained when substrate temperatures were kept between 0°C and 25°C. Orientation alignment of the crystalline films were affected by supply rate of iodine. By controlling the substrate temprature and the supply rate of iodine, highly oriented crystalline films were grown on mica substrates. It showed strong dichroism and anisotropic electrical propert ies.
The photocurrent behavior in polydiacetylene (PDA) single crystals of PTS (poly-(2, 4-hexadiyne-1, 6-diol bis(p-toluenesulfonate)) and MADF (poly-(1-(3-(methylamino)phenyl)-4-(3, 5-bis (trifluoromethyl)-phenyl) butadiyne)) have been investigated by using steady state photoconductivity measurements. These measurements were carried out as a function of sample temperature and incident light polarization. PTS and MADF show completely different behavior in these measurements. These differences between PTS and MADF suggest that the side groups of PDA strongly influence the photocurrent behavior in PDA.
Charge carrier generation and transport mechanisms in polydiacetylene thin film single crystals., poly-PTS (2,4-hexadiyne-1,6-diol bis(p-toluenesulfonate)) and poly- BTFP (bis-(4-n-butyl-2,3,5,6-tetra-fluorophenyl) butadiyne), are studied by using steady state and transient photoconductivity techniques. The electric field dependence of the steady state photocurrent is superlinear for both samples. Dependence of photocurrent on incident light polarization has been investigated. The polarization dependence of photocurrent has completely different behavior for the polydiacetylene PTS and BTFP. Single-gap transmission line experiment has been designed to directly measure the drift velocity of PTS single crystals. A drift velocity of the order of 106cm/s was measured.
SiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.